FQD18N20V2 Datasheet, Fairchild Semiconductor

*
*
*
*
*
* 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested.

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
*
*
.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.